IRFP150 DATASHEET PDF

Vishay Siliconix. Q g Max. Q gs nC. Q gd nC. Lead Pb -free. The TOAC package is preferred for.

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July Ordering Information. NOTE: When ordering, include the entire part number. These are N-Channel enhancement mode silicon gate. They are advanced power. These types can be operated directly from. Formerly developmental type TA File Number No Preview Available! Drain to Source Voltage Note 1. V DGR. Continuous Drain Current. Pulsed Drain Current Note 3. Gate to Source Voltage. Maximum Power Dissipation. Linear Derating Factor.

Operating and Storage Temperature. Maximum Temperature for Soldering. Leads at 0. Package Body for 10s, See Techbrief T pkg. This is a stress only rating and operation. Drain to Source Breakdown Voltage. Gate to Threshold Voltage.

Zero-Gate Voltage Drain Current. On-State Drain Current Note 2. I DSS. Gate to Source Leakage. Drain to Source On Resistance Note 2. Forward Transconductance Note 2. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Total Gate Charge. Gate to Source Charge. Q g TOT. Gate Charge is Essentially Independent of. Operating Temperature.

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July Ordering Information. NOTE: When ordering, include the entire part number. These are N-Channel enhancement mode silicon gate. They are advanced power.

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