Dt Sheet. UNIT 6. September 1 Rev 2. UNIT - - 0. September 2 Rev 2.
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Silicon Diffused Power Transistor. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in. Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Stress above one. These are stress ratings only and.
Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the.
The information presented in this document does not form part of any quotation or contract, it is believed to be. No liability will be accepted by the publisher for any. Publication thereof does not convey nor imply any license under patent or other.
These products are not designed for use in life support appliances, devices or systems where malfunction of these. Philips customers using or selling these products.
September 1 Rev 2. September 2 Rev 2. Test circuit for V CEOsust. Switching times definitions. Oscilloscope display for V CEOsust.
Switching times test circuit. Switching times waveforms. Typical DC current gain. Typical base-emitter saturation voltage. Typical turn-off losses. Typical collector-emitter saturation voltage. Typical collector storage and fall time. Normalised power dissipation. Transient thermal impedance. Forward bias safe operating area. Mounted with heatsink compound. Reverse bias safe operating area. Refer to mounting instructions for F-pack envelopes.
SOT; The seating plane is electrically isolated from all terminals. September 6 Rev 2. Product specification This data sheet contains final product specifications.
Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Application information Where application information is given, it is advisory and does not form part of the specification. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.
No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 7 Rev 2. Short-link Link Embed. Share from cover. Share from page:. More magazines by this user.
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BU2527AX - Silicon NPN Power Transistors
BU2527AX Silicon Diffused Power Transistor